The removal of thin films from the surface of a wafer is an important step in the manufacture of today’s semiconductor devices. One of the most important removal steps is the patterning of metal layers which serve as connections between layers on a microchip, or other semiconductor devices. The wafer is first patterned by photolithography, and then the etching process removes exposed metal areas, transferring the pattern to the metal layer. In this process, the etch gases are introduced into an electrical field. This field ionizes the gases, creating a plasma full of energetic ions. This plasma etches the wafer through several mechanisms. The first involves actual physical etching. This occurs when the highly excited ions smash into the wafer, breaking off a part of the surface. The second mechanism utilizes the high reactivity of the ionic species present in the plasma. These species diffuse to the wafer surface where they react with the exposed layer to form a volatile by-product that is swept away in the effluent gas stream. We have developed a scrubber to capture and treat fumes from the metal etch process using adsorption technology.